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“Because the B and P dopants are in sufficiently high concentrations for the Si to be degenerately doped, both segments inhibit the etching of Si in aqueous potassium hydroxide (KOH) solution.”
ACS applied materials & interfaces • 2017 | View Paper
“Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon , respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy.”